The impact of TiO2 interface layer on a Pd/n-LTPS schottky diode hydrogen detecting performances

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 2013-2018

  Chiang, Yen Ting ^a   Fang, Yean Kuen ^a   Chou, Tse Heng ^a   Lin, Cheng I ^a   Juang, Feng Renn ^a   Lin, Kung Cheng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon (A SI); excimer laser anneal (ELA); low temperature polysilicon (LTPS); palladium (PD); Tio2

Indexed keywords

AIR AMBIENT; AMORPHOUS SILICON (A-SI); GAS PLASMA; GLASS SUBSTRATES; HYDROGEN ADSORPTION; III-V COMPOUNDS; INTERFACE LAYER; LOW COSTS; LOW TEMPERATURES; LOW-TEMPERATURE POLYSILICON (LTPS); POLYSILICON FILMS; ROOM TEMPERATURE; SCHOTTKY DIODES; TIO;

AMORPHOUS FILMS; DIODES; EXCIMER LASERS; GAS ADSORPTION; GAS LASERS; HYDROGEN; PALLADIUM; POLYSILICON; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SUBSTRATES;

AMORPHOUS SILICON;

EID: 77955171131     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051364     Document Type: Article

References (22)

1. I. LundstrÖm, S. Shivaraman, C. Svensson, and L. Lundkvist, "A hydrogen-sensitive MOS field-effect transistor," Appl. Phys. Lett., vol.26, no.2, pp. 55-57, Jan. 1975.
2. K. Dobos, M. Armgarth, G. Zimmer, and I. LundstrÖm, "The influence of different insulators on palladium-gate metal-insulator- semiconductor hydrogen sensors," IEEE Trans. Electron Devices, vol.ED-31, no.4, pp. 508-510, Apr. 1984.
3. Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee, "Trench Pd/Si metal oxide semiconductor Schottky barrier diode for a high sensitivity hydrogen sensor," Appl. Phys. Lett., vol.57, no.25, pp. 2686-2688, Dec. 1990.
4. P. F. Ruths, S. Ashok, S. J. Fonash, and J. M. Ruths, "A study of Pd/SiMIS Schottky barrier diode hydrogen detector," IEEE Trans. Electron Devices, vol.ED-28, no.9, pp. 1003-1009, Sep. 1981.
5. C. W. Hung, H. L. Lin, H. I. Chen, Y. Y. Tsai, P. H. Lai, S. I. Fu, and W. C. Liu, "A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor," IEEE Electron Device Lett., vol.27, no.12, pp. 951-954, Dec. 2006.
6. C. T. Lu, K.W. Lin, H. I. Chen, H.M. Chuang, C. Y. Chen, andW. C. Liu, "A new Pd-Oxide- Al0.3Ga0.7As MOS hydrogen sensor," IEEE Electron Device Lett., vol.24, no.6, pp. 390-392, Jun. 2003.
7. W. C. Liu, H. J. Pan, H. I. Chen, K.W. Lin, S. Y. Cheng,W. Wang C., and K. H. Yu, "Hydrogen sensitive characteristics of a novel Pd/InP metal oxide semiconductor (MOS) Schottky diode hydrogen sensor," IEEE Trans. Electron Devices, vol.48, no.9, pp. 1938-1944, Sep. 2001.
8. I. H. Song, S. H. Kang, W. J. Nam, and M. K. Han, "A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film," IEEE Electron Device Lett., vol.24, no.9, pp. 580-582, Sep. 2003.
9. 2 thin films for dyes photodegradation," Thin Solid Films, vol.515, no.16, pp. 6294-6297, Jun. 2007.
10. D. Dwivedi, R. Dwivedi, and S. K. Srivastava, "The effect of hydrogeninduced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): A conductance study," Microelectron. J., vol.29, no.7, pp. 445-450, Jul. 1998.
11. R. Klingvall, I. LundstrÖm, and M. Eriksson, "Sub ppm detection of hydrogen," IEEE Sensors J., vol.8, no.3, pp. 301-307, Mar. 2008.
12. 2: A novel semiconductor oxide gas sensor," Mater. Lett., vol. 34, no. 1/2, pp. 99-102, Feb. 1998.
13. E. Comini, G. Faglia, G. Sberveglieri, Z. Pan, and Z. L.Wang, "Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts," Appl. Phys. Lett., vol.81, no.10, pp. 1869-1871, Sep. 2002.
14. 2-X structure," Phys. E, vol. 38, no. 1/2, pp. 219-221, Apr. 2007.
15. Y. Y. Tsai, C. W. Hung, S. I. Fu, P. H. Lai, H. C. Chang, H. I. Chen, and W. C. Liu, "Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes," Sens. Actuators B, Chem., vol.124, no.2, pp. 535-541, Jun. 2007.
16. J. R. Huang, W. C. Hsu, Y. J. Chen, T. B. Wang, K. W. Lin, H. I. Chen, and W. C. Liu, "Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes," Sens. Actuators B, Chem., vol.117, no.1, pp. 151-158, Sep. 2006.
17. 2 interfaces," J. Appl. Phys., vol.82, no.6, pp. 3143-3146, Sep. 1997.
18. M. Johansson, I. LundstrÖm, and L. G. Ekedahl, "Bridging the pressure gap for palladium metal insulator semiconductor hydrogen sensors in oxygen containing environments," J. Appl. Phys., vol.84, no.1, pp. 44- 51, Jul. 1998.
19. W. C. Liu, K. W. Lin, H. I. Chen, C. K. Wang, C. C. Cheng, S. Y. Cheng, and C. T. Lu, "A new Pt/Oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor," IEEE Electron Device Lett., vol.23, no.11, pp. 640-642, Nov. 2002.
20. 2/GaN Schottky diode," Sens. Actuators B, Chem., vol.129, no.1, pp. 292-302, Jan. 2008.
21. II. Dokme, S. Alt?ndal, and I.M. Afandiyeva, "The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V -T measurements," Semicond. Sci. Technol., vol.23, no.3, pp. 035 003-1-035 003-6, Mar. 2008.
22. C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, C. T. Lu, and W. C. Liu, "Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diodes," Sens. Actuators B, Chem., vol. 99, no. 2/3, pp. 425-430, May 2004.