Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes

Sensors and Actuators, B: Chemical

Volumn 124, Issue 2, 2007, Pages 535-541

  Tsai, Yan Ying ^a   Hung, Ching Wen ^a   Fu, Ssu I ^a   Lai, Po Hsien ^a   Chang, Hung Chi ^a   Chen, Huey Ing ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Hydrogen sensor; InAlP; MOS; MS; Pt metal; Semiconductor type

Indexed keywords

ADSORPTION; CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; MOS DEVICES; PLATINUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES;

HYDROGEN ADSORPTION; METAL SEMICONDUCTORS (MS); RELATIVE SENSITIVITY RATIO; SCHOTTKY BARRIER HEIGHT VARIATION;

SCHOTTKY BARRIER DIODES;

EID: 34249869537     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2007.01.017     Document Type: Article

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