A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 580-582

  Song, In Hyuk ^a   Kang, Su Hyuk ^a   Nam, Woo Jin ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Dual gate; Excimer laser annealing; Floating active structure; High mobility; Lateral grains; Multichannel; Poly Si TFT; Temperature gradient

Indexed keywords

ANNEALING; EXCIMER LASERS; GATES (TRANSISTOR); IRRADIATION; POLYCRYSTALS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

EXCIMER LASER ANNEALING; LASER IRRADIATION; POLYCRYSTALLINE SILICON; SILICON THIN FILM; TEMPERATURE GRADIENT;

THIN FILM TRANSISTORS;

EID: 0141452032     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816586     Document Type: Letter

References (8)

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