A novel tungsten-nickel alloy ohmic contact to SiC at 900 °c

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 791-793

  Okojie, R S ^a   Evans, L J ^a   Lukco, D ^a   Morris, J P ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b US Institute of Navigation   (United States)

Author keywords

Amphoteric; high temperature; nickel; ohmic contacts; silicon carbide; tungsten

Indexed keywords

AMPHOTERIC; DOPING LEVELS; HIGH TEMPERATURE; P-TYPE; SPECIFIC CONTACT RESISTANCES;

ARGON; ELECTRIC CONTACTORS; NICKEL; NICKEL ALLOYS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON ALLOYS; SODIUM; TUNGSTEN; TUNGSTEN CARBIDE;

SILICON CARBIDE;

EID: 77955168213     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050761     Document Type: Article

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