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Volumn 151, Issue 3, 1999, Pages 225-232

Interface chemistry of WN/4H-SiC structures

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE EFFECTS; NITROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0033340175     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00277-9     Document Type: Article
Times cited : (15)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.