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Volumn 151, Issue 3, 1999, Pages 225-232
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Interface chemistry of WN/4H-SiC structures
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
DEPOSITION;
DIFFUSION IN SOLIDS;
ELECTRIC PROPERTIES;
ELECTRIC VARIABLES MEASUREMENT;
HIGH TEMPERATURE EFFECTS;
NITROGEN;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
TUNGSTEN COMPOUNDS;
X RAY PHOTOELECTRON SPECTROSCOPY;
DEPTH PROFILING;
IDEALITY FACTOR;
TUNGSTEN NITRIDE;
INTERFACES (MATERIALS);
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EID: 0033340175
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(99)00277-9 Document Type: Article |
Times cited : (15)
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References (16)
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