Failure mechanisms in MEMS based silicon carbide high temperature pressure sensors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 429-432

  Okojie, R S ^a   Nguyen, P ^b   Nguyen, V ^b   Savrun, E ^b   Lukco, D ^c   Buehler, J ^c   McCue, T ^c  

^a NASA GLENN RESEARCH CENTER   (United States)

^b Sienna Technologies Inc   (United States)

^c ASRC Aerospace Corp   (United States)

Author keywords

High temperature; Pressure sensors; Reliability; Silicon carbide

Indexed keywords

HIGH TEMPERATURE EFFECTS; MEMS; PIEZOELECTRIC DEVICES; RELIABILITY ANALYSIS; SILICON CARBIDE; SINGLE CRYSTALS;

ACCELERATED STRESS TEST (AST); PIEZORESISTIVE PRESSURE SENSORS; PRESSURE SENSITIVITY; SINGLE CRYSTAL SILICON CARBIDE;

PRESSURE SENSORS;

EID: 34548773438     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369928     Document Type: Conference Paper

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