Thermally stable ohmic contacts to 6H-and 4H-p-type SiC

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 88-92

  Liu, S ^a   Scofield, J ^b  

^a Dayton University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONTACTORS; GOLD COMPOUNDS; NICKEL; OHMIC CONTACTS; SILICON CARBIDE; THERMODYNAMIC STABILITY;

CAP LAYERS; CHEMICAL DEPTH PROFILE; CONTACT RESISTIVITIES; CONTACT SURFACE; ELEVATED TEMPERATURE; IV CHARACTERISTICS; P-TYPE SIC; THERMALLY STABLE OHMIC CONTACTS;

ALUMINUM;

EID: 84967553902     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676766     Document Type: Conference Paper

References (5)

1. L. M. Porter and R. F. Davis, Trans. 3rd International High Temperature Electronics Conference, vol. I, VII-3, 1996
2. J. R. Waldrop, J. Appl. Phys. 75(9), 4548, 1994.
3. S. Adams, C. Severt, J. Leonard, S. Liu, and S. Smith, Trans. 2nd International High temperature Electronics Conference, vol. I, XII1-9, 1994.
4. J. B. Petit, P. G. Neudeck, C. S. Salupo, D. J. Larkin, and J. A. Powell, Proceedings of the 5th Conference on SiC and Related Materials (1993), p. 679.
5. S. Liu and J. Scofield, presented at the 7th International Conference on SiC and Related Materials, Aug. 31-Sept. 5, 1997, Stockholm Sweden.