On the possibility of degradation-free field effect transistors

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Islam, Ahmad Ehteshamul ^a   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DEGRADATION; DRAIN CURRENT; ELECTRON TRAPS; THRESHOLD VOLTAGE;

CIRCUIT PERFORMANCE; FREE TRANSISTORS; GUARD BAND VOLTAGE; VOLTAGE SCALING;

FIELD EFFECT TRANSISTORS;

EID: 43049123770     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2919798     Document Type: Article

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