Current-voltage and capacitance-voltage studies of nanocrystalline CdSe/Au Schottky junction interface

Journal of Nanoparticle Research

Volumn 12, Issue 6, 2010, Pages 2277-2286

  Sarangi, S N ^a   Adhikari, P K ^b   Pandey, D ^c   Sahu, S N ^a  

^a INSTITUTE OF PHYSICS   (India)

^b Uranium Corporation of India Limited   (India)

^c BANARAS HINDU UNIVERSITY   (India)

Author keywords

Current Voltage; Interface; Nanostructure; Schottky; Thin film

Indexed keywords

BAND GAPS; BULK DEVICES; C-V CHARACTERISTIC; CAPACITANCE RESPONSE; CAPACITANCE VOLTAGE; CDSE NANOCRYSTALS; CURRENT-VOLTAGE; DEVICE CHARACTERISTICS; DEVICE INTERFACES; DIFFERENT FREQUENCY; ELECTRODEPOSITION TECHNIQUE; INDIUM TIN OXIDE SUBSTRATES; IV CHARACTERISTICS; LOW FREQUENCY; MOTT-SCHOTTKY; MOTT-SCHOTTKY PLOTS; NANOCRYSTALLINE THIN FILMS; NANOCRYSTALLINES; NATIVE OXIDE LAYER; RUTHERFORD BACK-SCATTERING; SCHOTTKY; SCHOTTKY BARRIERS; SCHOTTKY JUNCTIONS; SERIES RESISTANCES; THIN OXIDE LAYERS;

CADMIUM COMPOUNDS; CAPACITANCE; FREQUENCY RESPONSE; ITO GLASS; NANOCRYSTALS; OXIDE FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCHOTTKY BARRIER DIODES; THIN FILMS; TIN; TITANIUM COMPOUNDS; VAPOR DEPOSITION;

CADMIUM ALLOYS;

CADMIUM SELENIDE; GOLD; NANOCRYSTAL; NANOMATERIAL; OXIDE;

ARTICLE; CRYSTAL STRUCTURE; ELECTRIC CAPACITANCE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; PRIORITY JOURNAL; SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 77955012807     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-009-9796-6     Document Type: Article

References (32)

1. Abdel-Latif RM (1999) Direct current conductivity of evaporated cadmium selenide thin films. Phys B 270:366-370
2. AP Alivisatos 1996 Perspectives on the physical chemistry of semiconductor nanocrystals J Phys Chem 100 13226 13239 10.1021/jp9535506 1:CAS:528:DyaK28Xkt1agu7o%3D
3. S Antohe V Ruxanclra H Alexandru 2002 The effect of the electron irradiation on the electrical properties of thin polycrystalline CdS and CdSe layers J Cryst Growth 237-239 1559 1565 10.1016/S0022-0248(01)02371-5 (Pubitemid 34545155)
4. MV Artemyev V Sperling U Woggon 1997 Electroluminescence in thin solid films of closely packed CdS nanocrystals J Appl Phys 81 6975 6977 10.1063/1.365261 1:CAS:528:DyaK2sXjt1anurY%3D 1997JAP....81.6975A
5. C Barret F Chekier A Vapaille 1983 Study of metal-semiconductor interface states using Schottky capacitance spectroscopy J Phys C 16 2421 2438 10.1088/0022-3719/16/12/026 1:CAS:528:DyaL3sXlsFSgsrc%3D 1983JPhC...16.2421B
6. BM Basol CM Stafsuad 1981 Determination of trap parameters in electrodeposited CdTe by schottky barrier capacitance measurements Thin Solid Films 78 217 222 10.1016/0040-6090(89)90586-5 1:CAS:528:DyaL3MXitVWlsrk%3D 1989TSF....78..217B (Pubitemid 11496645)
7. LE Brus 1984 Electron-electron and electron-hole interactions in small semiconductor crystallites: the size dependence of the lowest excited electronic state J Chem Phys 80 4403 4409 10.1063/1.447218 1:CAS:528:DyaL2cXitF2ltL8%3D 1984JChPh..80.4403B
8. F Cardon WP Gomes 1978 On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plot J Phys D 11 L63 L67 10.1088/0022-3727/11/4/003 1:CAS:528:DyaE1cXhsVGjtLk%3D 1978JPhD...11L..63C
9. Chu W, Mayer JW, Nicolet MA (1978) Backscattering spectrometry, Academic Press, Inc, New York, chapter-3
10. BO Dobbousi MG Bawendi O Onitsuka MF Rubner 1995 Electroluminescence from CdSe quantum-dot/polymer composites Appl Phys Lett 66 1316 1318 10.1063/1.113227 1995ApPhL..66.1316D
11. NA Hastas DH Tassis CA Dimitriadis L Dozsa S Franchi P Frigeri 2004 Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots Semicond Sci Technol 19 461 467 10.1088/0268-1242/19/3/030 1:CAS:528:DC%2BD2cXivVCgurs%3D 2004SeScT..19..461H
12. YW Heo YW Kwon Y Li SJ Pearton DP Norton 2004 p-type behavior in phosphorus-doped Zn, Mg.O device structures Appl Phys Lett 84 3474 3476 10.1063/1.1737795 1:CAS:528:DC%2BD2cXjsVKltbw%3D 2004ApPhL..84.3474H
13. T Kiliçoǧlu S Asubay 2005 The effect of native oxide layer on some electronic parameters of Au/n-Si/Au-Sb Schottky barrier diodes Phys B 368 58 63 10.1016/j.physb.2005.06.036 2005PhyB..368...58K (Pubitemid 41427963)
14. DL Klein PL McEuen JE Bowen R Roth AP Alivisatos 1996 An approach to electrical studies of single nanocrystals Appl Phys Lett 68 2574 2576 10.1063/1.116188 1:CAS:528:DyaK28Xis1Srs7w%3D 1996ApPhL..68.2574K (Pubitemid 126683980)
15. VL Kolvin MC Schlamp AP Alivisatos 1994 Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer Nature 370 354 357 10.1038/370354a0 1994Natur.370..354C (Pubitemid 24259754)
16. WH Laflere F Cardon WP Gomes 1974 On the differential capacitance of the n- and p-type gallium arsenide electrode Surf Sci 44 541 552 10.1016/0039-6028(74)90136-8 1:CAS:528:DyaE2cXltFalu7g%3D 1974SurSc..44..541L
17. TC Lee S Fung CD Beling HL Au 1992 A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes J Appl Phys 72 4739 4742 10.1063/1.352082 1992JAP....72.4739L
18. ML Luuia JL Hemandez Rojas C Leon I Martil 1993 Capacitance measurements of p-n junctions: depletion layer and diffusion capacitance contributions Eur J Phys 14 86 90 10.1088/0143-0807/14/2/009
19. H Mattoussi LH Radzilowski BO Dabbousi EL Thomas MG Bawendi MF Rubner 1998 Electroluminescence from heterostructures of poly(phenylene vinylene) and inorganic CdSe nanocrystals J Appl Phys 83 7965 7974 10.1063/1.367978 1:CAS:528:DyaK1cXjsFCrtr0%3D 1998JAP....83.7965M
20. HP Muruska F Namavar NH Kalkhoran 1992 Current injection mechanism for porous-silicon transparent surface light-emitting diodes Appl Phys Lett 61 1338 1340 10.1063/1.108467 1992ApPhL..61.1338M
21. DJ Norris AL Efros M Rosen MG Bawendi 1996 Size dependence of exciton fine structure in CdSe quantum dots Phys Rev B 35 16347 16354 10.1103/PhysRevB.53.16347 1996PhRvB..5316347N
22. 5 high-k dielectric J Phys D Appl Phys 41 105302 105306 10.1088/0022-3727/41/10/ 105302 2008JPhD...41j5302N (Pubitemid 351632085)
23. Pakma O, Serin N, Serin T, Altindal S (2008) The influence of series resistance and interface states on intersecting behavior of I-V characteristics of Al/TiO2/p-Si(MIS) structures at low temperatures. Semicond Sci Technol 23:105014 (9 pp)
24. CJ Panchal MS Desai VA Kheraj KJ Patel N Padha 2008 Barrier inhomogeneities in Au/CdSe thin film Schottky diodes Semicond Sci Technol 23 015003 015009 10.1088/0268-1242/23/1/015003 2008SeScT..23a5003P (Pubitemid 350265538)
25. SN Sahu S Chandra 1987 Chemical-bath-deposited CdS and CdS: Li films and their use in photoelectrochemical solar cells Sol Cells 22 163 173 10.1016/0379-6787(87)90041-X 1:CAS:528:DyaL1cXisVGlsA%3D%3D (Pubitemid 18532219)
26. SN Sarangi SN Sahu 2004 CdSe nanocrystalline thin films: composition, structure and optical properties Phys E 23 159 167 10.1016/j.physe.2004.02.001 1:CAS:528:DC%2BD2cXksVakt7w%3D
27. T Sugimura T Tsuzuku T Katsui Y Kasai T Inokuma S Hashimoto K Iiyama S Takamiya 1999 A preliminary study of MIS diodes with nm-thin GaAs-oxide layers Solid State Electron 43 1571 1576 10.1016/S0038-1101(99)00105-7 1:CAS:528:DyaK1MXmsVyhsLs%3D 1999SSEle..43.1571S
28. RT Tung 1992 Electron transport at metal-semiconductor interfaces: general theory Phys Rev B 45 13509 13513 10.1103/PhysRevB.45.13509 1992PhRvB..4513509T
29. RT Tung 2001 Recent advances in Schottky barrier concepts Mater Sci Eng R 35 1 138 10.1016/S0927-796X(01)00037-7
30. J Van de Lagemaat M Plakman D Vanmaekelbergh J Kelly 1996 Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching Appl Phys Lett 69 2246 2248 10.1063/1.117142 1996ApPhL..69.2246V
31. D Vanmaekelbergh A Koster FI Martin 1997 A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks Adv Mater 9 575 578 10.1002/adma.19970090713 1:CAS:528:DyaK2sXjvFKqsL0%3D
32. Y Yang S Xue S Liu J Huang J Shen 1996 Fabrication and characteristics of ZnS nanocrystals/polymer composite doped with tetraphenylbenzidine single layer structure light-emitting diode Appl Phys Lett 69 377 379 10.1063/1.118066 1:CAS:528:DyaK28XksVClu7g%3D 1996ApPhL..69..377Y