Preliminary study of MIS diodes with nm-thin GaAs-oxide layers

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1571-1576

  Sugimura, Tomoyuki ^a   Tsuzuku, Tatsutoshi ^a   Katsui, Takayuki ^a   Kasai, Yuki ^a   Inokuma, Takao ^a   Hashimoto, Shoushin ^a   Iiyama, Kouichi ^a   Takamiya, Saburo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; MIS DEVICES; OXIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL INSULATOR SEMICONDUCTOR DIODE; SURFACE FLATNESS; SURFACE THICKNESS;

SEMICONDUCTOR DIODES;

EID: 0033173898     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00105-7     Document Type: Article

References (6)

1. Bahl SR, del Alamo JA, Dickmann J, Schildberg S. Off-state breakdown in InAlAs/InGaAs MODFET's. IEEE Trans ED 1995;42(1):15.
2. Putnum CS, Somerville MH, del Alamo JA, Chao PC, Duh KG. In: Proceedings of the International Conference on InP and Related Materials. 1997. p. 197-200.
3. Takamiya S, Harayama M, Sugimura T, Tsuzuku T, Taya T, Iiyama K, Hashimoto S. Reverse currents of Schottky Gates of III-V MESFET/HEMTs: Field emission and tunnel currents. Solid-State Electronics 1998;42(3):447-51.
4. Vig JR. UV/ozone cleaning of surfaces. J Vac Sci Technol 1985;A3(3):1027-34.
5. Driad R, Lu ZH, Laframboise S, Scansen D, McKinnon WR, McAlister SP. Surface passivation of InGaAs/InP heterostructures using UV-irradiation and ozone. In: Proceedings of the Tenth International Conference on InP and Related Materials, 1998. p. 459-62.
6. 2 films. In: Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, 1998. p. 116-7.