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Advanced Materials

Volumn 9, Issue 7, 1997, Pages 575-578

A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks

(3) Vanmaekelbergh, Daniel a Koster, Alfred a Marín, Francisco Iranzo a

a UTRECHT UNIVERSITY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; GOLD; MOLECULAR STRUCTURE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM PHOSPHIDE; SCHOTTKY BARRIER JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0031166407 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.19970090713 Document Type: Article

Times cited : (16)

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