Synthesis of β-SiC/SiO 2 core-sheath nanowires by CVD technique using Ni as catalyst

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 5, 2010, Pages 3046-3052

  Panda, S K ^a   Sengupta, J ^a   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Base growth mechanism; Core Sheath nanowire; Knotted Core structure; Uniform Core structure

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; BASE-GROWTH MECHANISM; CORE STRUCTURE; CUBIC SILICON CARBIDE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GROWTH MECHANISMS; GROWTH TECHNIQUES; HEXAMETHYLDISILANES; HIGH DENSITY; HOT WALL; KNOTTED-CORE STRUCTURE; MICRO RAMAN SPECTROSCOPY; NI FILMS; PLANAR DEFECT; SI(111) SUBSTRATE; SIC NANOWIRE; SINGLE-CRYSTALLINE; SOURCE MATERIAL; TWIN PLANES; VAPOR-LIQUID-SOLID; ZINC BLEND STRUCTURE;

ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DEFECTS; FIELD EMISSION; FIELD EMISSION MICROSCOPES; INFRARED SPECTROSCOPY; NANOWIRES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON OXIDES; X RAY DIFFRACTION; X RAY SPECTROSCOPY; ZINC;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77954961202     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2167     Document Type: Conference Paper

References (37)

1. G. L. Harris, Properties of Silicon Carbide, edited by G. L. Harris, Institution of Electrical Engineers, INSPEC, London (1995).
2. E. W. Wong, P. E. Sheehan, and C. M. Lieber, Science 277, 1971 (1997).
3. D. W. Kim, Y. J. Choi, K. J. Choi, J. G. Park, J. H. Park, S. M. Pimenov, V. D. Frolov, N. P. Abanshin, B. I. Gorfinkel, N. M. Rossukanyi, and A. I. Rukovishnikov, Nanotechnol. 19, 225706 (2008).
4. M. Ali, V. Cimalla, V. Lebecev, T. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher, Sens. Actuator B 122, 182 (2007).
5. G. Li, W. L. Burggraf, R. J. Shoemaker, D. Eastwood, and E. A. Stiegman, Appl. Phys. Lett. 76, 3373 (2000).
6. G. W. Meng, L. D. Zhang, Y. Qin, C. M. Mo, and F. Phillipp, Nano-struct. Mater. 12, 1003 (1999).
7. W. M. Zhou, Z. X. Yang, F. Zhu, and Y. F. Zhang, Physica E 31, 9 (2006).
8. Q. G. Fu, H. J. Li, X. H. Shi, K. Z. Li, J. Wei, and Z. B. Hu, Mater. Chem. Phys. 100, 108 (2006).
9. J. W. Wei, K. Z. Li, H. J. Li, Q. G. Fu, and L. Zhang, Mater. Chem. Phys. 95, 140 (2006).
10. X. C. Wu, W. H. Song, W. D. Huang, M. H. Pu, B. Zhao, Y. P. Sun, and J. J. Du, Mater. Res. Bull. 36, 847 (2001).
11. H. Kohno and H. Yoshida, Physica B 376-377, 890 (2006).
12. G. Shen, Y. Bando, C. Ye, B. Liu, and D. Golberg, Nanotechnol. 17, 3468 (2006).
13. B. C. P. Li, J. F. Gerald, J. Zou, and Y. Chen, IEEE-ICONN 58 (2006).
14. B. C. Kang, S. B. Lee, and J. H. Boo, Thin Solid Films 464-465, 215 (2004).
15. G. W. Meng, L. D. Zhang, C. M. Mo, S. Y. Zhang, Y. Qin, S. P. Feng, and H. J. Li, J. Mater. Res. 13, 2533 (1998).
16. I. C. Leu and M. H. Hon, J. Cryst. Growth 236, 171 (2002).
17. G. W. Ho, A. S. W. Wong, D. J. Kang, and M. E. Weiland, Nanotechnol. 15, 996 (2004).
18. S. Z. Deng, Z. S. Wu, J. Zhou, N. S. Xu, and J. Chen, Chem. Phys. Lett. 356, 511 (2002).
19. J. C. Li, C. S. Lee, and S. T. Lee, Chem. Phys. Lett. 355, 147 (2002).
20. G. Gundiah, G. V. Madhav, A. Govindaraj, M. M. Scikh, and C. N. R. Rao, J. Mater. Chem. 12, 1606 (2002).
21. A. Gupta, D. Pramanik, S. Varma, and C. Jacob, Bull. Mater. Sci. 27, 445 (2004).
22. J. P. Li and A. J. Steckl, J. Electrochem. Soc. 142, 634 (1995).
23. Y. Baek, Y. H. Ryu, and K. Yong, Mater. Sci. Eng. C. 26, 805 (2006).
24. G. Thomas and M. J. Goringe, Transmission Electron Microscopy of Materials, TechBooks, Fairfax, VA (1990), p. 97
25. A. Gupta and C. Jacob, Microelectron. Eng. 83, 5 (2006).
26. X. Feng, Z. Chen, J. Ma, X. Zan, H. Pu, and G. Lu, Opt. Mater. 23, 39 (2003).
27. P. Li, L. Xu, and Y. Qian, Cryst. Growth Des. 8, 2431 (2008).
28. Z. C. Feng, W J. Choyke, and J. A. Powell, J. Appl. Phys. 64, 6827 (1988).
29. Y. Yao, S. T. Lee, and F. H. Li, Chem. Phys. Lett. 381, 628 (2003).
30. Z. Zhu, T. L. Chen, Y. Gu, J. Warren, and R. M. Osgoos, Chem. Mater. 17, 4227 (2005).
31. K. Takahashi, S. Nishino, and J. Saraie, J. Electrochem. Soc. 139, 3565 (1992).
32. S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda, Appl. Surf. Sci. 224, 215 (2004).
33. C. Bower and O. Zhou, Appl. Phys. Lett. 77, 2767 (2000).
34. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
35. A. Chrysanthou and P. Grieveson, J. Mater. Sci. 26, 3463 (1991).
36. D. H. Wang, D. Xu, Q. Wang, Y. J. Hao, G. Q. Jin, X. Y. Guo, and K. N. Tu, Nanotechnol. 19, 215602 (2008).
37. J. Johansson, L. S. Karlsson, C. P. T. Svensson, T. Martensson, B. A. Wacaser, K. Deppert, L. Samuelson, and W. Scifert, Nature Mater. 5, 574 (2006).