Unusual defects in silicon carbide thin films grown by multiple or interrupted growth technique

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 5-8

  Gupta, A ^a   Jacob, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

3C SiC; 3C SiC nanowires; CVD; Defects; HMDS; Interrupted growth; Voids

Indexed keywords

CRACKS; DEFECTS; MICROSTRUCTURE; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

3C-SIC; HEXAMETHYLDISILANE (HMDS); INTERRUPTED GROWTH;

SILICON CARBIDE;

EID: 30344469874     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.013     Document Type: Conference Paper

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