Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4 Se3

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 7, 2010, Pages

  Makinistian, L ^a,f   Albanesi, E A ^a   Gonzalez Lemus, N V ^a   Petukhov, A G ^b   Schmidt, D ^c   Schubert, E ^c   Schubert, M ^c   Losovyj, Ya B ^d   Galiy, P ^e   Dowben, P ^c  

^a Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

^b SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY   (United States)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d LOUISIANA STATE UNIVERSITY   (United States)

^e IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^f UNIVERSIDAD NACIONAL DE ENTRE RÍOS   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954846399     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.075217     Document Type: Article

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