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Volumn 254, Issue 4, 2007, Pages 1002-1006

Laser synthesis of thin layers of In 4 Se 3 , In 4 Te 3 and modification of their structure and characteristics

Author keywords

Epitaxial heterostructures n In 4 Se 3 p In 4 (Se 3 ) 1 x (Te 3 ) x; Photosensitivity; Pulse laser irradiation; Spectral characteristics

Indexed keywords

ELECTRON MICROSCOPY; EPITAXIAL FILMS; LASER BEAM EFFECTS; LASER PULSES; PHOTOSENSITIVITY; STOICHIOMETRY;

EID: 36248936174     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.09.054     Document Type: Article
Times cited : (13)

References (12)
  • 5
    • 0011095395 scopus 로고
    • Hogarth C.A. (Ed), Interscience Publishers, a division of John Wiley and Sons Inc., New York
    • In: Hogarth C.A. (Ed). Materials Used in Semiconductors Devices (1965), Interscience Publishers, a division of John Wiley and Sons Inc., New York
    • (1965) Materials Used in Semiconductors Devices
  • 6
    • 0003923958 scopus 로고
    • Keyes R.J. (Ed), Springer-Verlag, Heidelberg (Radio and Communications, Moscow, 1985)
    • In: Keyes R.J. (Ed). Optical and Infrared Detectors (1985), Springer-Verlag, Heidelberg (Radio and Communications, Moscow, 1985)
    • (1985) Optical and Infrared Detectors
  • 12
    • 36249001304 scopus 로고    scopus 로고
    • Diode Schottky systems Al-nanosilicon interface layer-Si
    • Buzaneva E., and Scharff P. (Eds), Kluwer Academic Publishers, The Netherlands
    • Vorobets G.I. Diode Schottky systems Al-nanosilicon interface layer-Si. In: Buzaneva E., and Scharff P. (Eds). Frontiers of Multifunctional Integrated Nanosystems (2004), Kluwer Academic Publishers, The Netherlands 213-224
    • (2004) Frontiers of Multifunctional Integrated Nanosystems , pp. 213-224
    • Vorobets, G.I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.