The bulk band structure and inner potential of layered In4Se3

Applied Surface Science

Volumn 254, Issue 14, 2008, Pages 4322-4325

  Liu, Jing ^a   Losovyj, Ya B ^a,b   Komesu, Takashi ^a   Dowben, P A ^a   Makinistian, L ^c,d   Albanesi, E A ^c,d   Petukhov, A G ^e   Galiy, P ^f   Fiyala, Ya ^f  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LOUISIANA STATE UNIVERSITY   (United States)

^c UNIVERSIDAD NACIONAL DE ENTRE RÍOS   (Argentina)

^d Instituto de Desarrollo Tecnologico para la Industria Quimica   (Argentina)

^e SOUTH DAKOTA SCHOOL OF MINES AND TECHNOLOGY   (United States)

^f IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

Bulk band structure; FP LAPW; Layered semiconductors; Photoemission

Indexed keywords

PHOTOEMISSION; TWO DIMENSIONAL; VALENCE BANDS;

BULK BAND STRUCTURES; FP-LAPW; LAYERED SEMICONDUCTORS; WEIGHTED BANDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 43049107531     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.01.061     Document Type: Article

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