In-situ STM observation of GaAs surfaces after nitridation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1733-1735

  Makimoto, Toshiki ^a   Kasu, Makoto ^a   Benchimol, Jean L ^a,b   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b ORANGE LABS   (France)

Author keywords

(100); (111)A; (111)B; (311)A; Atomic nitrogen; GaAs; MOMBE; Nitridation; Selective area growth; STM

Indexed keywords

EID: 0342692052     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1733     Document Type: Article

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