Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8023-8028

  Berkovits, V L ^a   Masson, L ^b   Makarenko, I V ^a   Ulin, V P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Auger electron spectroscopy; Chemical nitridation; Gallium arsenide; Nitride monolayer; Scanning tunneling microscopy; Surface morphology

Indexed keywords

ALUMINUM NITRIDE; AUGER ELECTRON SPECTROSCOPY; GALLIUM ARSENIDE; GALLIUM NITRIDE; HYDRAZINE; MONOLAYERS; NANOTECHNOLOGY; NITRIDATION; NITRIDES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SULFUR COMPOUNDS; SURFACE MORPHOLOGY;

GAAS SURFACES; MICRO-ETCHING; NITRIDE FILMS; NITRIDED SURFACES; SURFACE ETCHING; SURFACE NITRIDES; SURFACE ORIENTATION; WET CHEMICAL TREATMENT;

III-V SEMICONDUCTORS;

EID: 52949103684     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.023     Document Type: Article

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