메뉴 건너뛰기




Volumn 16, Issue 4, 1998, Pages 2528-2538

Chemical and photochemical processes in sulfide passivation of GaAs(100): In situ optical study and photoemission analysis

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0032337531     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581377     Document Type: Article
Times cited : (26)

References (41)
  • 15
    • 0026222262 scopus 로고
    • T. Ohno, Surf. Sci. 255, 229 (1991); T. Ohno and K. Shiraishi, Phys. Rev. B 42, 11 194 (1990).
    • (1991) Surf. Sci. , vol.255 , pp. 229
    • Ohno, T.1
  • 16
  • 17
    • 21344489395 scopus 로고
    • V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Semiconductors 28, 260 (1994); V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Appl. Phys. Lett. 63, 970 (1993); V. M. Lantratov, V. L. Berkovits, T. V. L'vova, and V. P. Ulin, Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 1095.
    • (1994) Semiconductors , vol.28 , pp. 260
    • Berkovits, V.L.1    Lantratov, V.M.2    L'vova, T.V.3    Shakiashvili, G.A.4    Ulin, V.P.5    Paget, D.6
  • 18
    • 0001225054 scopus 로고
    • V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Semiconductors 28, 260 (1994); V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Appl. Phys. Lett. 63, 970 (1993); V. M. Lantratov, V. L. Berkovits, T. V. L'vova, and V. P. Ulin, Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 1095.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 970
    • Berkovits, V.L.1    Lantratov, V.M.2    L'vova, T.V.3    Shakiashvili, G.A.4    Ulin, V.P.5    Paget, D.6
  • 19
    • 11644319809 scopus 로고    scopus 로고
    • edited by M. Scheffler and R. Zimmermann World Scientific, Singapore
    • V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Semiconductors 28, 260 (1994); V. L. Berkovits, V. M. Lantratov, T. V. L'vova, G. A. Shakiashvili, V. P. Ulin, and D. Paget, Appl. Phys. Lett. 63, 970 (1993); V. M. Lantratov, V. L. Berkovits, T. V. L'vova, and V. P. Ulin, Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 1095.
    • (1996) Proceedings of the 23rd International Conference on the Physics of Semiconductors , pp. 1095
    • Lantratov, V.M.1    Berkovits, V.L.2    L'vova, T.V.3    Ulin, V.P.4
  • 22
    • 85034289574 scopus 로고    scopus 로고
    • submitted
    • V. P. Ulin, V. L. Berkovits, V. M. Lantratov, and T. L. L'vova, Proceedings of the 192th Meeting of The Electrochemical Society, State of the Art Program on Compound Semiconductors XXVII, Paris, September 1997 (The Electrochemical Society, New York 1997), Vol. 2, p. 2068; V. L. Berkovits, V. P. Ulin, V. M. Lantratov, and T. L. L'vova, Russ. J. Electrochem. (submitted).
    • Russ. J. Electrochem.
    • Berkovits, V.L.1    Ulin, V.P.2    Lantratov, V.M.3    L'vova, T.L.4
  • 31
    • 85034293362 scopus 로고    scopus 로고
    • note
    • We have verified that the weak light excitation used for RA measurements has a negligible effect on the surface chemistry.
  • 35
    • 85034280056 scopus 로고    scopus 로고
    • note
    • The deconvolution parameters were the same as in Ref. 11, with the only exception that the Lorentzian linewidth was slightly increased to 0.220 eV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.