In situ monitoring of adsorption and desorption of atomic nitrogen on GaAs (001) and (111)A surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 B, 1996, Pages

  Yamauchi, Yoshiharu ^a   Uwai, Kunihiko ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; DESORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS ADSORPTION; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTOR GROWTH; SURFACES;

ATOMIC NITROGEN; NITRIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029754426     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l80     Document Type: Article

References (15)