Sublimation epitaxy of cubic silicon carbide in vacuum

Journal of Physics: Conference Series

Volumn 223, Issue 1, 2010, Pages

  Vasiliauskas, R ^a   Marinova, M ^b   Syvajarvi M ^a   Mantzari, A ^b   Andreadou, A ^b   Polychroniadis, E K ^b   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EDUCATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEATION; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

A-SI LAYERS; CUBIC SILICON CARBIDE; DEFECT FORMATION; HOMOEPITAXIAL; IN-VACUUM; SIC BUFFER LAYERS; SIC SUBSTRATES; SUBLIMATION EPITAXY;

EPITAXIAL GROWTH;

EID: 77954711630     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/223/1/012014     Document Type: Conference Paper

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