Fast epitaxy by PVT of SiC in hydrogen atmosphere

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Syvajarvi M ^a   Ciechonski, R R ^a   Yazdi, G R ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Defects; A1. Nucleation; A3. Physical vapor deposition processes

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; DIFFUSION; DRY ETCHING; EPITAXIAL GROWTH; HELIUM; HYDROGEN; MASS TRANSPORTATION; SUBLIMATION; THERMAL CONDUCTIVITY;

EPITAXIAL LAYERS; GAS PHASE; HIGH-TEMPERATURE DEVICES; PHYSICAL VAPOR DEPOSITION PROCESS;

SILICON CARBIDE;

EID: 15844392735     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.129     Document Type: Conference Paper

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