Interfacial resistive properties of nickel silicide thin films to doped silicon

Journal of the Electrochemical Society

Volumn 157, Issue 8, 2010, Pages

  Bhaskaran, Madhu ^a   Sriram, Sharath ^a   Holland, Anthony S ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED SILICON; DOPED SILICON; ELECTRICAL CONTACTS; ELECTRICAL PROPERTY; FINITE ELEMENT MODELING; NANOSCALE CHARACTERIZATION; NANOTECHNOLOGY DEVICES; NICKEL SILICIDE; NICKEL SILICIDE THIN FILMS; P-TYPE; QUANTITATIVE CHARACTERISTICS; RIGOROUS EVALUATION; SILICON DOPING; SPECIFIC CONTACT RESISTIVITY; TEST STRUCTURE; ULTRATHIN LAYERS;

ANTIMONY; BORON; DOPING (ADDITIVES); ELECTRIC CONTACTORS; ION IMPLANTATION; NANOELECTRONICS; NICKEL ALLOYS; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 77954691421     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3454214     Document Type: Article

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