Universal error corrections for finite semiconductor resistivity in Cross-Kelvin Resistor test structures

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 914-919

  Holland, Anthony S ^a   Reeves, Geoffrey K ^a   Leech, Patrick W ^b  

^a RMIT UNIVERSITY   (Australia)

^b CSIRO   (Australia)

Author keywords

Cross Kelvin Resistor (CKR); Ohmic contact; Specific contact resistance; Test structures

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ERROR CORRECTION; OHMIC CONTACTS; SEMICONDUCTOR MATERIALS; THRESHOLD VOLTAGE;

CROSS KELVIN RESISTOR; FINITE SEMICONDUCTOR RESISTIVITY; SPECIFIC CONTACT RESISTANCE; TEST STRUCTURE;

RESISTORS;

EID: 2942670460     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.827385     Document Type: Article

References (11)

1. S. J. Proctor, L. W. Linholm, and J. A. Mazer, "Direct measurement of interfacial contact resistance, end contact resistance and interfacial contact layer uniformity," IEEE Trans. Electron Devices, vol. ED-30, pp. 1535-1542, Nov. 1983.
2. M. Finetti, A. Scorzoni, and G. Soncini, "Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns," IEEE Electron Device Lett., vol. EDL-5, pp. 524-526, Dec. 1984.
3. W. M. Loh, S. E. Swirhun, T. A. Schreyer, R. M. Swanson, and K. C. Saraswat, "Modeling and measurement of contact resistances," IEEE Trans. Electron Devices, vol. ED-34, pp. 512-523, Mar. 1987.
4. A. Scorzoni and M. Finetti, "The effect of sheet resistance modifications underneath the contact on the extraction of the contact resistivity; application to the Cross Kelvin Resistor," IEEE Trans. Electron Devices, vol. 35, pp. 386-388, Mar. 1988.
5. J. Santander, M. Lozano, and C. Cané, "Extraction of contact resistivity on Kelvin L-resistor structures," IEEE Trans. Electron Devices, vol. 41, pp. 1073-1074, June 1994.
6. H. H. Berger, "Models for contacts to planar devices," Solid State Electron., vol. 15, pp. 145-158, 1972.
7. T. Ohmi, "Ultra-clean processing for ULSI," J. Microelectron., vol. 26, no. 6, pp. 595-619, 1995.
8. Semiconductor Industry Association: International Technology Roadmap for Semiconductors, 2001.
9. R. L. Gillenwater, M. J. Hafich, and G. Y. Robinson, "Extraction of the minimum specific contact resistivity using Kelvin resistors," IEEE Electron Device Lett., vol. EDL-7, pp. 674-676, Dec. 1986.
10. W. M. Loh, S. E. Swirhun, T. A. Schreyer, R. M. Swanson, and K. C. Saraswat, "Analysis and scaling of Kelvin resistors for extraction of specific contact resistivity," IEEE Electron Device Lett., vol. EDL-6, pp. 105-108, Mar. 1985.
11. W. J. C. Alexander and A. J. Walton, "Sources of error in extracting the specific contact resistance from Kelvin device measurements," in Proc. IEEE Microelectronic Test Structures, vol. 1, 1988, pp. 17-22.