Analytical and finite-element modeling of a cross kelvin resistor test structure for low specific contact resistivity

IEEE Transactions on Electron Devices

Volumn 56, Issue 10, 2009, Pages 2250-2254

  Holland, Anthony S ^a   Reeves, Geoffrey K ^a   Bhaskaran, Madhu ^a   Sriram, Sharath ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

Contact resistance; Cross Kelvin resistor (CKR); Ohmic contacts; Specific contact resistivity

Indexed keywords

ANALYTICAL EXPRESSIONS; ANALYTICAL MODEL; ANALYTICAL TECHNIQUES; CIRCULAR CONTACTS; CROSS KELVIN RESISTOR (CKR); EXPERIMENTAL DATA; FINITE ELEMENT MODELING; PARASITIC RESISTANCES; SPECIFIC CONTACT RESISTIVITY; TEST STRUCTURE;

APPROXIMATION THEORY; CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRIC CONVERTERS; HARMONIC ANALYSIS; OHMIC CONTACTS; SILICIDES;

RESISTORS;

EID: 70350043534     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2028623     Document Type: Article

References (15)

1. D. K. Schroder, Semiconductor Material and Device Characterization 3rd ed. Hoboken, NJ: Wiley, 2006, pp. 127-184.
2. M. Finetti, S. Guerri, P. Negrini, A. Scorzoni, and I. Suni, "Contact resistivity of silicon/silicide structures formed by thin film reactions," Thin Solid Films, vol. 130, no. 1/2, pp. 37-45, Aug. 1985.
3. M. Finetti, A. Scorzoni, and G. Soncini, "Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns," IEEE Electron Device Lett., vol. EDL-5, no. 12, pp. 524-526, Dec. 1984.
4. W. M. Loh, S. E. Swirhun, T. A. Schreyer, R. M. Swanson, and K. C. Saraswat, "Modeling and measurement of contact resistances," IEEE Trans. Electron Devices, vol. ED-34, no. 3, pp. 512-524, Mar. 1987.
5. A. Scorzoni and M. Finetti, "The effect of sheet resistance modifications underneath the contact on the extraction of the contact resistivity: Application to the cross Kelvin resistor," IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 386-388, Mar. 1988.
6. R. M. Anderson and T. M. Reith, "Microstructural and electrical properties of thin PtSi films and their relationships to deposition parameters," J. Electrochem. Soc., vol. 122, no. 10, pp. 1337-1347, Oct. 1975.
7. S. S. Cohen, G. Gildenblat, M. Ghezzo, and D. M. Brown, "Al-0.9% Si/Si contacts to shallow junctions," J. Electrochem. Soc., vol. 129, no. 6, pp. 1335-1338, Jun. 1982.
8. S. J. Proctor, L. W. Linholm, and J. A. Mazer, "Direct measurement of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity," IEEE Trans. Electron Devices, vol. ED-30, no. 11, pp. 1535-1542, Nov. 1983.
9. G. K. Reeves, A. S. Holland, H. B. Harrison, and P. W. Leech, "Electrical modelling of Kelvin structures for the derivation of low specific contact resistivity," in Proc. 27th ESSDERC, 1997, pp. 492-495.
10. A. S. Holland and G. K. Reeves, "New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices," Microelectron. Reliab., vol. 40, no. 6, pp. 965-971, Jun. 2000.
11. N. Stavitski, J. H. Klootwijk, H. W. van Zeijl, A. Y. Kovalgin, and R. A. M. Wolters, "Cross-bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization," IEEE Trans. Semicond. Manuf., vol. 22, no. 1, pp. 146-152, Feb. 2009.
12. G. K. Reeves, "Specific contact resistance using a circular transmission line model," Solid State Electron., vol. 23, no. 5, pp. 487-490, May 1980.
13. W. Shockley, "Research and investigation of inverse epitaxial UHF power transistor," Air Force Atomic Lab., Wright-Patterson Air Force Base, Dayton, OH, Final Tech. Rep. AL-TDR-64-207, 1964.
14. H. H. Berger, "Models for contacts to planar devices," Solid State Electron., vol. 15, no. 2, pp. 145-158, Feb. 1972.
15. 2) values of specific contact resistivity," IEEE Electron Device Lett., vol. 29, no. 3, pp. 259-261, Mar. 2008.