Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy

Micron

Volumn 40, Issue 1, 2009, Pages 11-14

  Bhaskaran, M ^a   Sriram, S ^a   Mitchell, D R G ^b   Short, K T ^b   Holland, A S ^a   Mitchell, A ^a  

^a RMIT UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

EFTEM; Glancing angle XRD; Nickel silicide; SAED; TEM

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; DIFFRACTION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPES; MICROSCOPIC EXAMINATION; NICKEL; NICKEL ALLOYS; SILICIDES; SILICON; SOLIDS; THICK FILMS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EFTEM; GLANCING ANGLE XRD; NICKEL SILICIDE; SAED; TEM;

SEMICONDUCTING SILICON COMPOUNDS;

NICKEL; NICKEL SILICIDE; SILICON; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPY, ELECTRON, TRANSMISSION; NICKEL; SILICON; SILICON COMPOUNDS;

EID: 54349110403     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2008.01.012     Document Type: Article

References (4)

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3. Iwai H., Ohguro T., and Ohmi S.-I. NiSi salicide technology for scaled CMOS. Microelectron. Eng. 60 (2002) 157-169
4. Qin M., Poon M.C., and Yuen C.Y. A study of nickel silicide film as a mechanical material. Sens. Actuators A 87 (2000) 90-95