Photoluminescence analysis of Iron contamination effect in multicrystalline silicon wafers for solar cells

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 747-750

  Tajima, Michio ^a   Ikebe, Masatoshi ^a,b   Ohshita, Yoshio ^c   Ogura, Atsushi ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

D line; Dislocation cluster; Iron contamination; Multicrystalline silicon; Oxygen precipitation; Photoluminescence

Indexed keywords

BAND-EDGE EMISSIONS; BEFORE AND AFTER; FE CONTAMINATION; IRON CONTAMINATION; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON (MC-SI); MULTICRYSTALLINE SILICON WAFERS; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; PHOTOLUMINESCENCE ANALYSIS; PL SPECTRA; SI WAFER;

CONTAMINATION; EDGE DISLOCATIONS; ELECTRONIC PROPERTIES; IRON ANALYSIS; OXYGEN; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; POLYSILICON; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 77954658359     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1131-6     Document Type: Article

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