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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers

(5) Inoue, M a,b Sugimoto, H a Tajima, M a Ohshita, Y c Ogura, A b

a JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

b MEIJI UNIVERSITY (Japan)

c TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP-LEVEL EMISSION; GRAIN DEFECTS; LOW TEMPERATURE; MULTICRYSTALLINE SILICON WAFERS; OXYGEN IMPURITIES; OXYGEN PRECIPITATION; PL SPECTRUM; ROOM TEMPERATURES; SPECTROSCOPIC MAPPING; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES;

CONFORMAL MAPPING; EMISSION SPECTROSCOPY; LEAKAGE (FLUID); LIGHT EMISSION; LUMINESCENCE; OXYGEN; PHOTOLUMINESCENCE; POLYSILICON; PRECIPITATION (CHEMICAL); REAL TIME SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 53749094303 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9605-5 Document Type: Article

Times cited : (27)

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