Low-temperature pulsed-PECVD ZnO thin-film transistors

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 554-558

  Zhao, Dalong ^a   Mourey, Devin A ^b   Jackson, Thomas N ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Low temperature; Pulsed plasma chemical vapor deposition (pulsed PECVD); Thin film transistors (TFTs); Zinc oxide

Indexed keywords

FIELD-EFFECT MOBILITIES; HIGH QUALITY; LOW TEMPERATURES; ON/OFF RATIO; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PULSED PLASMA; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTORS (TFTS); ZNO; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; BYPRODUCTS; DEPOSITION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILMS; THRESHOLD VOLTAGE; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77954623807     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0995-9     Document Type: Conference Paper

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