Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1211-1215

  Glowacki, A ^a   Laskowski, P ^a   Boit, C ^a   Ivo, Ponky ^b   Bahat Treidel, Eldad ^b   Pazirandeh, Reza ^b   Lossy, Richard ^b   Würfl, Joachim ^b   Tränkle, Günther ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CRITICAL VOLTAGES; DEVICE PROPERTIES; DEVICE TEMPERATURE; ELECTRICAL CHARACTERIZATION; GAN CAP; GAN HEMTS; HIGH-POWER; ON-WAFER; OPERATING CONDITION; PHOTON EMISSIONS; SELF-HEATING; SPECTRAL SIGNATURE; STEP-STRESS; STRESS DEGRADATION; TECHNOLOGICAL PROCESS; THERMAL PROPERTIES; TIME STRESS;

DEGRADATION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; HEATING; HIGH ELECTRON MOBILITY TRANSISTORS; PHOTONS; SEMICONDUCTING GALLIUM; THERMODYNAMIC PROPERTIES;

GALLIUM NITRIDE;

EID: 69249206568     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.022     Document Type: Article

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