Photon emission spectral signatures of AIGaN/GaN HEMT for functional and reliability analysis

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2008, Pages 220-226

  Glowacki, Arkadiusz ^a   Boit, Christian ^a   Lossy, Richard ^b   Würfl, Joachim ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIGAN/GAN; BIAS CONDITIONS; ELECTRICAL CHARACTERIZATIONS; GATE VOLTAGES; LOCAL DEGRADATIONS; NEAR INFRA REDS; OPERATING MODES; PERFORMANCE VARIATIONS; PHOTON EMISSIONS; WAVELENGTH REGIMES;

DEGRADATION; EMISSION SPECTROSCOPY; FAILURE ANALYSIS; INFRARED SPECTROSCOPY; PHOTONS; QUALITY ASSURANCE; RELIABILITY ANALYSIS; SAFETY FACTOR;

PHOTODEGRADATION;

EID: 63549129542     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1361/cp2008istfa220     Document Type: Conference Paper

References (7)

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3. Fundamentals of Photon Emission in Silicon, C. Boit, Microelectronics Failure Analysis, fifth Edition 2005, EDFAS, ASM International, ISBN: 0871708043, p356-368.
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5. Electroluminescence in AlGaN/GaN HEMTs, Nakao Takeshi, Ono Yutaka, Akita Mitsutoshi, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, IEIC Technical Report, Vol. 102, no.80, Page 53-67, (2002)
6. Electroluminescence in AlGaN/GaN High Electron mobility Transistors under High Bias Voltage, Nakao Takeshi, Ohno Yutaka, Akita Mitsutoshi, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi, Jpn. J. Appl. Phys. Vol. 41 (2002) pp. 1990-1991
7. A review of the failure modes and mechnisms of GaN-based HEMTs, Enrico Zanoni, Gaudenzio Meneghesso, Giovanni Verzelessi, Francesca Danesin, Matteo Meneghini, Fabiana, Rampazzo, Augusto Tazzoli, Franco Zanon, IEDM07, Tech. Digest, IEEE International Electron Device Meeting - Washington DC, 2007, pp. 381-384.