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Volumn 38, Issue 8, 2009, Pages 1733-1740

Study of LWIR and VLWIR focal plane array developments: Comparison between p-on-n and different n-on-p technologies on LPE HgCdTe

Author keywords

FPA; HgCdTe; Ion implantation; VLWIR

Indexed keywords

DEFECT RATE; EXCESS NOISE; FPA; HGCDTE; HIGH HOMOGENEITY; HIGH QUANTUM EFFICIENCY; HIGH UNIFORMITY; ION IMPLANTED; JOINT VENTURES; LONG INFRARED; LONG WAVES; MERCURY CADMIUM TELLURIDE; MERCURY VACANCIES; SPACE INDUSTRY; VLWIR;

EID: 68749105668     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0795-2     Document Type: Conference Paper
Times cited : (44)

References (16)
  • 4
    • 0023166530 scopus 로고
    • 10.1016/0022-0248(90)90798-P
    • G.L. Destefanis 1988 J. Cryst. Growth 86 700 10.1016/0022-0248(90)90798-P
    • (1988) J. Cryst. Growth , vol.86 , pp. 700
    • Destefanis, G.L.1
  • 8
    • 45549085770 scopus 로고    scopus 로고
    • L. Mollard, G. Destefanis, J. Rothman, N. Baier, S. Bisotto, P. Ballet, J.P. Chamonal, P. Castelein, J.P. Zanatta, M. Tchagaspanian, A.M. Papon, J.P. Barnes, F. Henry, S. Gout, G. Bourgois, C. Pauter, and P. Fougères, Proc. SPIE 6940 0F (2008)
    • (2008) Proc. SPIE 6940 0F
    • Mollard, L.1
  • 10
    • 68749085855 scopus 로고    scopus 로고
    • HgCdTe p/n FPA fabrication using arsenic incorporation during MBE growth
    • to be published same issue
    • O. Gravrand, P. Ballet, J. Baylet, and N. Baier, HgCdTe p/n FPA fabrication using arsenic incorporation during MBE growth, J. Electron. Mater. (to be published) (2009) (same issue)
    • (2009) J. Electron. Mater.
    • Gravrand, O.1    Ballet, P.2    Baylet, J.3    Baier, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.