Reduction of efficiency droop in InGaN-based blue LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Ni, X ^a   Li, X ^a   Xie, J ^a   Fan, Q ^a   Shimada, R ^a   Ozgur U ^a   H Morkoc ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BARRIER HEIGHTS; BARRIER WIDTHS; BLUE LEDS; EFFECTIVE MASS; ELECTRON LEAKAGES; ELECTRON OVERFLOWS; EXTERNAL QUANTUM EFFICIENCIES; HOLE INJECTIONS; LIGHT EMITTING DIODE LEDS; QUANTUM WELLS; STRUCTURE LIGHTS;

CURRENT DENSITY; ELECTROLUMINESCENCE; ELECTRON INJECTION; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE TRAPS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 65349122381     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809877     Document Type: Conference Paper

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