Crystallisation of amorphous germanium thin films

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 5, 2009, Pages 3013-3019

  Garcia, G ^a   Lopeandia, A F ^a   Bernardi, A ^b   Alonso, M I ^b   Goni, A R ^b   Labar, J L ^c   Rodrfguez Viejo, J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b CSIC   (Spain)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Crystallisation; Dewetting; Embedded films; Ge nanocrystals; Raman scattering.

Indexed keywords

AMORPHOUS GERMANIUM; ANNEALING TEMPERATURES; CAPPING LAYER; CRYSTALLISATION; DEWETTING; E BEAM EVAPORATION; EMBEDDED FILMS; GE NANOCRYSTALS; HIGHER TEMPERATURES; LAYER THICKNESS; METALLIC LIQUID; NANOCRYSTAL FORMATION; TRILAYERS; ULTRA-THIN; VERY THIN FILMS;

CRYSTALLIZATION; GERMANIUM; LIQUID FILMS; NANOCRYSTALS; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SCATTERING; THIN FILMS;

AMORPHOUS FILMS;

EID: 67649240431     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.225     Document Type: Article

References (23)

1. Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, and Y. Masumoto, Appl. Phys. Lett. 59, 3168 (1991).
2. A. V. Kolobov, S. Q. Wei, W. S. Yan, H. Oyanagi, Y. Maeda, and K. Tanaka, Phys. Rev. B 67, 195314 (2003).
3. K. Das, M. N. Goswami, R. Mahapatra, G. S. Kar, A. Dhar, H. N. Acharya, S. Maikap, J. H. Lee, and S. K. Ray, Appl. Phys. Lett. 84, 1386 (2004).
4. W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, and V. Ng, Appl. Phys. Lett. 80, 2014 (2002).
5. W. K. Choi, S. Kanakaraju, Z. X. Shen, and W. S. Li, Appl. Surf. Sci. 144-145, 697 (1999).
6. G. Radnoczi and B. Pecz, Thin Solid Films 232, 68 (1993).
7. C. L. Heng, L. W. Teo, V. Ho, M. S. Tay, Y. Lei, W. K. Choi, and W. K. Chim, Microelectron. Eng. 66, 218 (2003).
8. W. K. Choi, V. Ng, V. S. L. Swee, C. S. Ong, M. B. Yu, Rusli, and S. F. Yoon, Scripta Mater. 44, 1873 (2001).
9. A. Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, P. Normand, P. Dimitrakis, D. Tsoukalas, N. Cherkashin, and A. Claverie, Appl. Phys. A 81, 363 (2005).
10. A. Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Skarlatos, and D. Tsoukalas, Appl. Phys. Lett. 82, 1212 (2003).
11. G. V. M. Williams, A. Bittar, and H. J. Trodahl, J. Appl. Phys. 67, 1874 (1990).
12. M. I. Alonso, M. Garriga, A. Bernardi, A. R. Gofii, A. F. Lopeandia, G. Garcia, J. Rodrfguez-Viejo, and J. L. Labdr, Thin Solid Films 516, 4277 (2008).
13. J. K. Bording and J. Tafto, Phys. Rev. B 62, 8098 (2000).
14. M. Zacharias and P. Streitenberger, Phys. Rev. B 62, 8391 (2000).
15. C. M. Yang and H. A. Atwater, Appl. Phys. Lett. 68, 339 (1996).
16. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 39, 625 (1981).
17. I. H. Campbell and P. M. Fauchet, Solid State Commun. 58, 739 (1986).
18. C. Favazza, R. Kalyanaraman, and R. Sureshkumar, J. Appl. Phys. 102, 104308 (2007).
19. R. Huang and Z. Suo, Thin Solid Films 429, 273 (2003).
20. S. Herminghaus, K. Jacobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, and S. Schlagowski, Science 282, 916 (1998).
21. M. Bestehorn and K. Neuffer, Phys. Rev. Lett. 87, 046101 (2001).
22. D. T. Danielson, D. K. Sparacin, J. Michel, and L. C. Kimerling, J. Appl. Phys. 100, 083507 (2006).
23. J. E. Kline and J. P. Leonard, Thin Solid Films 488, 306 (2005).