Self-aligned amorphous-silicon TFTs on clear plastic substrates

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 166-168

  Cheng, I Chun ^a   Kattamis, Alex Z ^a   Long, Ke ^a   Sturm, James C ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon (a Si:H); Plastic substrates; Self aligned process; Thin film transistors (TFTs)

Indexed keywords

AMORPHOUS SILICON; PHOTOLITHOGRAPHY; PLASTICS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THRESHOLD VOLTAGE;

PLASTIC SUBSTRATES; SELF ALIGNED PROCESS;

THIN FILM TRANSISTORS;

EID: 33644662800     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870247     Document Type: Article

References (12)

1. A. Constant, S. G. Burns, H. Shanks, C. Gruber, A. Landin, D. Schmidt, C. Thielen, F. Olympie, T. Schumacher, and J. Cobbs, "Development of thin film transistor based circuits on flexible polyimide substrates," in Proc. Electrochem. Soc., vol. 94-35, 1995, pp. 392-400.
2. P. I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, and J. C. Sturm, "Spherical deformation of compliant substrates with semiconductor device islands," J. Appl. Phys., vol. 95, pp. 705-712, 2004.
3. I.-C. Cheng, A. Kattamis, K. Long, J. C. Sturm, and S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Disp., vol. 13/7, pp. 563-568, 2005.
4. F. Lemmi, W. Chung, S. Lin, P. M. Smith, T. Sasagawa, B. C. Drews, A. Hua, J. R. Stern, and J. Y. Chen, "High-performance TFTs fabricated on plastic substrates," IEEE Electron Device Lett., vol. 25, no. 5, pp. 486-488, 2004.
5. A. Kattamis, I.-C. Cheng, K. Long, J. C. Sturm, and S.Wagner, "Dimensionally stable processing of a-Si TFTs on polymer foils," in Proc. 47th Ann. TMS Electron. Mater. Conf., 2005, p. 73.
6. W. S. Wong, K. E. Paul, and R. A. Street, "Digital-lithographic processing for thin-film transistor array fabrication," J. Non-Cryst. Sol., vol. 338-340, pp. 710-714, 2004.
7. K. Jain, M. Klosner, M. Zemel, and S. Raqhunandan, "Flexible electronics and displays: High-resolution, roll-to-roll, projection lithography and photoablation processing technologies for high-throughput production," Proc. IEEE, vol. 93, pp. 1500-1510, 2005.
8. Y. Kuo, "A self-aligned, tri-layer, a-Si:H thin film transistor prepared from two photo masks," J. Electrochem. Soc., vol. 139, pp. 1199-1204, 1992.
9. D. B. Thomasson and T. N. Jackson, "Fully self-aligned tri-layer a-Si:H thin-film transistors with deposited doped contact layer," IEEE Electron Device Lett., vol. 19, no. 2, pp. 124-126, Feb. 1998.
10. C. S. Yang, W. W. Read, C. Arthur, E. Srinivasan, and G. N. Parsons, "Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVD," IEEE Electron Device Lett., vol. 19, no. 2, pp. 180-182, Feb 1998.
11. H. Gleskova, S.Wagner, V. Gasparik, and P. Kovac, "150 °C amorphous silicon thin-film transistor technology for polyimide substrates," J. Electrochem. Soc., vol. 148, pp. G370-G374, 2001.
12. Z. Suo, E. Y. Ma, H. Gleskova, and S. Wagner, "Mechanics of rollable and foldable film-on-foil electronics," Appl. Phys. Letters, vol. 74, pp. 1177-1179, 1999.