Top-gate amorphous silicon TFT with self-aligned silicide source/drain and high mobility

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 737-739

  Huang, Yifei ^a   Hekmatshoar, Bahman ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon; Amorphous silicon ( Si); Self aligned silicide; Silicon; Thin film transistor (TFT); Top gate

Indexed keywords

METALS; NONMETALS; OPTICAL DESIGN; SILICON; THIN FILM TRANSISTORS;

ACTIVE LAYERS; ELECTRON FIELDS; FABRICATED DEVICES; FLEXIBLE POLYMER SUBSTRATES; HIGH MOBILITY; METAL SILICIDES; PROCESS STEPS; SELF ALIGNED (SA); SILICIDE SOURCE/DRAIN (S/D); SILICON THIN FILMS; SOURCE AND DRAIN (S/D);

AMORPHOUS SILICON;

EID: 47249132138     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000645     Document Type: Article

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