Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1332-1334

  Wang, Maojun ^a   Cheng, Chung Choi ^b   Beling, Chris D ^b   Fung, Stevenson ^b   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

AlGaN GaN; Enhancement mode; Fluorine; Polarization field; Positron annihilation

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; CHARGED IONS; E-FIELD; ENERGY BAND; ENHANCEMENT MODE; ENHANCEMENT MODES; FLUORINE IONS; FLUORINE PLASMA; HETERO INTERFACES; OPERATION PRINCIPLES; PLASMA-INDUCED; POLARIZATION FIELD; S PARAMETERS;

CRYSTALS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRONS; FLUORINE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; IONS; MAGNESIUM PRINTING PLATES; MODULATION; PLASMA APPLICATIONS; PLASMAS; POLARIZATION; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 77954294814     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983463     Document Type: Article

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