Estimation of amorphous fraction in multilevel phase change memory cells

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 209-212

  Papandreou, N ^a   Pantazi, A ^a   Sebastian, A ^a   Eleftheriou, E ^a   Breitwisch, M J ^b   Lam, C ^b   Pozidis, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ELEMENTS; ACTIVE LAYER; AMORPHOUS CHALCOGENIDE; AMORPHOUS FRACTION; CELL STATE; EFFECTIVE THICKNESS; ELECTRICAL MEASUREMENT; ESTIMATED PARAMETER; PHASE CHANGE MEMORY CELLS; PHASE DISTRIBUTION; SUBTHRESHOLD; TRANSPORT MODELS; TRAP-LIMITED CONDUCTION;

CURRENT VOLTAGE CHARACTERISTICS; PARAMETER ESTIMATION; PULSE CODE MODULATION;

PHASE CHANGE MEMORY;

EID: 72849115870     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331303     Document Type: Conference Paper

References (6)

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