Dynamic resistance - A metric for variability characterization of phase-change memory

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 126-129

  Rajendran, Bipin ^a   Breitwisch, Matt ^a   Lee, Ming Hsiu ^c   Burr, Geoffrey W ^b   Shih, Yen Hao ^c   Cheek, Roger ^a   Schrott, Alejandro ^a   Chen, Chieh Fang ^c   Joseph, Eric ^a   Dasaka, Ravi ^a   Lung, H L ^c   Lam, Chung ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Chalcogenide; Electrothermal simulations; Nonvolatile memory; Phase change memory (PCM)

Indexed keywords

PROGRAMMING THEORY; PULSE CODE MODULATION;

CELL PROCESS; CHALCOGENIDE; DYNAMIC RESISTANCES; ELECTROTHERMAL SIMULATIONS; EXPERIMENTAL DATUM; INTRINSIC PROPERTIES; MEMORY CELLS; NONVOLATILE MEMORY; PHASE CHANGES; PHASE-CHANGE MEMORY (PCM); PROGRAMMING CURRENTS;

PHASE CHANGE MEMORY;

EID: 59649112340     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010004     Document Type: Article

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