High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scattering layers

IEEE Photonics Technology Letters

Volumn 20, Issue 8, 2008, Pages 659-661

  Lee, Chia En ^a   Lee, Yea Chen ^a   Kuo, Hao Chung ^a   Lu, Tien Chang ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Flip chip light emitting diodes (FC LEDs); Naturally textured p GaN layer; Patterned sapphire; Sapphire textured layer; Triple light scattering layers

Indexed keywords

CURRENT INJECTIONS; FLIP-CHIP LIGHT-EMITTING DIODES; GAN LAYERS; HIGH BRIGHTNESS; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; LIGHT-SCATTERING LAYER; PATTERNED SAPPHIRE; TOP SURFACE;

DIODES; EXTRACTION; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT SCATTERING; REFRACTION; SAPPHIRE; SCATTERING;

LIGHT EMITTING DIODES;

EID: 68249110036     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.919509     Document Type: Article

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