Improved light output power of GaN-based light-emitting diodes using double photonic quasi-crystal patterns

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1152-1154

  Huang, Hung Wen ^a,b   Lin, Chung Hsiang ^b   Huang, Zhi Kai ^a   Lee, Kang Yuan ^b   Yu, Chang Chin ^b   Kuo, Hao Chung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Luxtaltek Corporation   (Taiwan)

Author keywords

Gallium nitride (GaN); Light emitting diodes (LEDs); Nanoimprint lithography (NIL); Photonic quasi crystal (PQC)

Indexed keywords

DRIVING CURRENT; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EMITTING DEVICES; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHT-EMITTING DIODES (LEDS); NANOHOLES; NANOIMPRINT LITHOGRAPHY (NIL); OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; SCATTERING EFFECTS;

CORUNDUM; CRYSTAL STRUCTURE; CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANOIMPRINT LITHOGRAPHY; ORGANIC LIGHT EMITTING DIODES (OLED); PIEZOELECTRICITY; QUASICRYSTALS; SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 70350584511     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029985     Document Type: Article

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