Low-temperature annealing of radiation-induced degradation in 4H-SiC bipolar junction transistors

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 707-709

  Hallén, Anders ^a   Nawaz, Muhammad ^b   Zaring, Carina ^c   Usman, Muhammad ^a   Domeij, Martin ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b University Graduate Centre (UNIK)   (Norway)

^c TranSiC AB   (Sweden)

Author keywords

Annealing; bipolar junction transistor (BJT); current gain; point defects; radiation hardness; silicon carbide (SiC)

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; BREAKDOWN PROPERTY; BREAKDOWN VOLTAGE; CARBON IONS; CURRENT GAIN; CURRENT GAINS; ELECTRICAL CHARACTERISTIC; FLUENCES; IMPLANTED DEVICE; ION RADIATION; LOW DOSE; LOW TEMPERATURE ANNEALING; OUTPUT CHARACTERISTICS; RADIATION HARDNESS; RADIATION-INDUCED DEGRADATION; REVERSE BIAS; SENSITIVE PARAMETER; SIC BIPOLAR JUNCTION TRANSISTORS;

ANNEALING; DEFECTS; HARDNESS; POINT DEFECTS; SILICON CARBIDE; TUNNEL DIODES;

BIPOLAR TRANSISTORS;

EID: 77954142214     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2047237     Document Type: Article

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