Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 415-418

  Leveque P ^a   Martin, D ^a   Svensson, B G ^b   Hallen A ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

4H SiC; Defects; DLTS

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; HYDROGEN; PROTONS;

EPILAYERS;

SILICON CARBIDE;

EID: 18744438559     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.415     Document Type: Conference Paper

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