4H-sic mesfets behavior after high dose irradiation

IEEE Transactions on Nuclear Science

Volumn 47, Issue , 2000, Pages 598-603

  Brisset, C ^a   Noblanc, O ^b   Picard, C ^a   Joffre, F ^a   Brylinski, C ^b  

^a CEA SACLAY   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE MATERIALS; DOSIMETRY; IRRADIATION; MESFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES;

CONDUCTIVE SUBSTRATE; DOSE LEVEL; ELECTRICALLY ACTIVE DEFECTS;

RADIATION DAMAGE;

EID: 0034206733     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856486     Document Type: Article

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