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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal

(5) Kim, Ja Yeon a,d Kwon, Min Ki a,b Park, Seong Ju a Kim, Sang Hoon c Lee, Ki Dong c,e

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Chosun University (South Korea)

c LG Electronics Inc (South Korea)

d UNIVERSITY OF CALIFORNIA (United States)

e Box 580 (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; FORWARD VOLTAGE; GREEN LEDS; GREEN LIGHT; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; OPTICAL OUTPUT POWER; SELECTIVE AREAS; SERIES RESISTANCES;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; PHOTONIC CRYSTALS;

LIGHT EMITTING DIODES;

EID: 77954049584 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3454240 Document Type: Article

Times cited : (43)

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