Enhanced light extraction from triangular GaN-based light-emitting diodes

IEEE Photonics Technology Letters

Volumn 19, Issue 23, 2007, Pages 1865-1867

  Kim, Ja Yeon ^a   Kwon, Min Ki ^a   Kim, Jae Pil ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Current measurement; Extraction efficiency; Gallium nitride; GaN; Light emitting diodes; Light output power; Light emitting diodes (LEDs); Power generation; Shaping; Substrates; Texturing

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; LIGHT EMISSION; PHOTONICS; SEMICONDUCTING GALLIUM COMPOUNDS;

LIGHT EXTRACTION; LIGHT OUTPUT POWER; RADIANT FLUX; SHAPING;

LIGHT EMITTING DIODES;

EID: 38049100888     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.907644     Document Type: Article

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