InAs/Ga1-xInxSb infrared superlattice diodes: correlation between surface morphology and electrical performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3794, Issue , 1999, Pages 41-46

  Fuchs, F ^a   Buerkle, L ^a   Pletschen, W ^a   Schmitz, J ^a   Walther, M ^a   Guellich, H ^a   Herres, N ^a   Mueller, S ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; INFRARED RADIATION; LEAKAGE CURRENTS; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS; SURFACES; X RAY DIFFRACTION;

INFRARED PHOTODIODE; INFRARED SUPERLATTICE DIODES; INTERFERENCE OSCILLATION; TUNNELING CURRENT;

PHOTODIODES;

EID: 0033346831     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.366728     Document Type: Conference Paper

References (8)