In Situ doped source/drain for performance enhancement of double-gated poly-Si nanowire transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1608-1615

  Chen, Wei Chen ^a   Lin, Horng Chih ^a   Chang, Yu Chia ^a   Lin, Chuan Ding ^b   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

field effect transistor; in situ doping; leakage; multiple gate; nanowire (NW); polycrystalline Si (poly Si)

Indexed keywords

IN-SITU DOPING; LEAKAGE; MULTIPLE GATES; POLY-SI; POLYCRYSTALLINE-SI;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; NANOWIRES; PLASMA ETCHING; THIN FILM TRANSISTORS;

POLYSILICON;

EID: 77954030278     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049227     Document Type: Article

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