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Volumn 25, Issue 7, 2010, Pages
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Low-temperature-processed (<100 °c) organic thin-film transistor using hollow-cathode CVD SiO2 as the gate insulator
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION TEMPERATURES;
ELECTRICAL CHARACTERISTIC;
FIELD-EFFECT MOBILITIES;
GATE INSULATOR;
HOLLOW CATHODES;
LOW TEMPERATURES;
LOW-TEMPERATURE DEPOSITION;
ON/OFF CURRENT RATIO;
ORGANIC THIN FILM TRANSISTORS;
PROCESSING TEMPERATURE;
RF POWER;
SUBTHRESHOLD SWING;
CHEMICAL VAPOR DEPOSITION;
ELECTRON SOURCES;
PROCESSING;
SILICON COMPOUNDS;
SURFACE TREATMENT;
THIN FILM TRANSISTORS;
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EID: 77953804694
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/25/7/075006 Document Type: Article |
Times cited : (6)
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References (20)
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