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Volumn 25, Issue 7, 2010, Pages

Low-temperature-processed (<100 °c) organic thin-film transistor using hollow-cathode CVD SiO2 as the gate insulator

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HOLLOW CATHODES; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; ON/OFF CURRENT RATIO; ORGANIC THIN FILM TRANSISTORS; PROCESSING TEMPERATURE; RF POWER; SUBTHRESHOLD SWING;

EID: 77953804694     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/7/075006     Document Type: Article
Times cited : (6)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.