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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6562-6568

Film characteristics of low-temperature plasma-enhanced chemical vapor deposition silicon dioxide using tetraisocyanatesilane and oxygen

(2) Idris, Irman a Sugiura, Osamu a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Hydrogen free tetraisocyanatesilane; Hydroxyl group free; Low temperature; PECVD; TICS; Water free

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC CONDUCTIVITY OF SOLIDS; ETCHING; OXYGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICA; THERMAL EFFECTS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; TETRAISOCYANATESILANE;

SEMICONDUCTING FILMS;

EID: 0032290814 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.6562 Document Type: Article

Times cited : (28)

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